Deposition apparatus

ABSTRACT

A deposition apparatus for performing a deposition process by using a mask with respect to a substrate, the deposition apparatus includes a chamber, a support unit in the chamber, the support unit including first holes and being configured to support the substrate, a supply unit configured to supply at least one deposition raw material toward the substrate, and movable alignment units through the first holes of the support unit, the alignment units being configured to support the mask and to align the mask with respect to the substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a divisional application based on pending application Ser. No.14/020,849, filed Sep. 8, 2013, the entire contents of which is herebyincorporated by reference.

This application claims the benefit of Korean Patent Application No.10-2012-0144673, filed on Dec. 12, 2012, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein in itsentirety by reference.

BACKGROUND

1. Field

Example embodiments relate to a deposition apparatus, a method offorming a thin film using the same, and a method of manufacturing anorganic light-emitting display apparatus. More particularly, exampleembodiments relate to a deposition apparatus providing an efficientdeposition procedure and a deposition film with improvedcharacteristics, a method of forming a thin film using the same, and amethod of manufacturing an organic light-emitting display apparatus.

2. Description of the Related Art

Semiconductor devices, display devices, and other electronic devicesinclude a plurality of thin films. Various methods may be used to formthe plurality of thin films, one of which is a deposition method.

The deposition method uses various raw materials, e.g., one or moregases, to form a thin film. The deposition method includes a chemicalvapor deposition (CVD) method, an atomic layer deposition (ALD) method,and the like.

Among display apparatuses, an organic light-emitting display apparatusis expected to become a next generation display apparatus due to itswide viewing angles, high contrast, and fast response speeds. Theconventional organic light-emitting display apparatus includes anintermediate layer having an organic emission layer between first andsecond electrodes which face each other, and also includes one or morevarious thin films. At this point, a deposition process is used to forma thin film of the organic light-emitting display apparatus.

SUMMARY

Example embodiments provide a deposition apparatus which may be used toefficiently perform a deposition process and to easily improve acharacteristic of a deposition film, a method of manufacturing a thinfilm using the deposition apparatus, and a method of manufacturing anorganic light-emitting display apparatus.

According to an aspect of the example embodiments, there is provided adeposition apparatus for performing a deposition process by using a maskwith respect to a substrate, the deposition apparatus including achamber, a support unit in the chamber, the support unit including firstholes and being configured to support the substrate, a supply unitconfigured to supply at least one deposition raw material toward thesubstrate, and movable alignment units through the first holes of thesupport unit, the alignment units being configured to support the maskand to align the mask with respect to the substrate.

The deposition apparatus may further include alignment confirmationmembers configured to confirm an alignment state of the substrate andthe mask through second holes in the support unit.

The alignment confirmation members may be configured to check alignmentof an alignment mark on the substrate and an alignment mark on the maskto confirm the alignment state of the substrate and the mask.

The second holes in the support unit may be closer to a center region ofthe support unit than the first holes.

The alignment confirmation members may be farther from the supply unitthan the support unit.

The support unit may be between the alignment confirmation members andthe supply unit.

The chamber may include transparent windows overlapping the secondholes, the alignment confirmation members being configured to confirmthe alignment state of the substrate and the mask through thetransparent windows.

A cross-sectional area of the alignment units may be smaller than a sizeof the first holes, the alignment units being movable in threedimensions inside the first holes.

The alignment units may be configured to move vertically andhorizontally within the first hole while supporting the mask.

An upper surface of the support unit may be curved.

A center region of the upper surface of the support unit may protrudeupward relative to end regions of the upper surface of the support unit.

A lower surface of the support unit is curved in accordance with acurvature of the upper surface of the support unit.

A lower surface of the support unit may be flat.

The deposition apparatus may further include lift pins through thirdholes in the support unit, the lift pins being configured to support thesubstrate and to move vertically in the third holes to dispose thesubstrate onto the support unit.

The third holes may be closer to a center region of the support unitthan the first holes.

The deposition apparatus may further include a base plate configured tosupport the supply unit, the base plate being positioned farther fromthe support unit than the supply unit.

The deposition apparatus may further include a power unit configured toapply voltage between the supply unit and the support unit to generateplasma.

The deposition apparatus may further include a cleaning unit configuredto generate plasma and to insert the plasma into the chamber to cleaninside of the chamber.

The support unit may be movable along a normal thereto.

The chamber may include at least one doorway, the substrate or the maskbeing inserted to the chamber through the at least one doorway.

According to another aspect of the example embodiments, there isprovided a method of forming a thin film on a substrate by using adeposition apparatus, wherein the method includes inserting thesubstrate into a chamber, disposing the substrate on a support unit, thesupport unit including first holes, aligning a mask with respect to thesubstrate by moving alignment units, the alignment units extendingthrough the first holes of the support unit to support the mask, andsupplying at least one deposition raw material toward the substrate toform the thin film on the substrate.

Aligning the mask with respect to the substrate may include confirmingan alignment state of the substrate and the mask by using in real-timealignment confirmation members through second holes in the support unit.

Using the alignment confirmation members may include checking analignment mark of each of the mask and the substrate.

Aligning the mask with respect to the substrate may include moving liftpins toward the support unit, while supporting the substrate, the liftpins penetrating through third holes in the support unit.

The method may further include controlling a distance between thesubstrate and the supply unit by vertically moving the support unit upand down, after the aligning of the mask with respect to the substrate.

The method may further include cleaning of the chamber by generating aremote plasma from a cleaning unit connected to the chamber, andinserting the remote plasma to the chamber after forming the thin filmlayer.

According to another aspect of the example embodiments, there isprovided a method of manufacturing an organic light-emitting displayapparatus, the method including inserting a substrate into a chamber,disposing the substrate on a support unit, the support unit includingfirst holes, aligning a mask with respect to the substrate by usingalignment units disposed to penetrate the first holes of the supportunit while supporting the mask, and supplying from a supply unit one ormore deposition raw materials toward the substrate, such that at leastone thin film of an organic light emitting element is formed on thesubstrate.

Aligning the mask with respect to the substrate may include confirmingan alignment state of the substrate and the mask by using in real-timealignment confirmation members through second holes in the support unit.

Forming the organic light emitting element on the substrate may includeforming a first electrode, an intermediate layer having an organiclight-emitting layer, a second electrode, and an encapsulating layer onthe substrate, at least the encapsulating layer being the thin film ofthe organic light emitting element.

Forming the thin film of the organic light emitting element may includeforming an insulating layer.

Forming the thin film of the organic light emitting element may includeforming a conductive film.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of ordinary skill in the art bydescribing in detail exemplary embodiments with reference to theattached drawings, in which:

FIG. 1 illustrates a schematic view of a deposition apparatus accordingto an embodiment;

FIG. 2 illustrates a view of a mask and a substrate aligned by usingalignment units of the deposition apparatus of FIG. 1;

FIG. 3 illustrates a magnified view of a portion R of FIG. 1;

FIG. 4 illustrates a plan view of a support unit of FIG. 1 in detail;

FIG. 5 illustrates a plan view of one of first holes of the support unitof FIG. 4 in detail;

FIG. 6A illustrates a cross-sectional view of the support unit of FIG.1;

FIGS. 6B and 6C illustrate modified examples of the support unit of FIG.1;

FIG. 7 illustrates a schematic view of a deposition apparatus accordingto another embodiment;

FIG. 8 illustrates a magnified view of a portion R of FIG. 7;

FIG. 9 illustrates a plan view of the support unit 210 of FIG. 7 indetail;

FIG. 10 illustrates a schematic cross-sectional view of an organiclight-emitting display apparatus manufactured using a depositionapparatus according to an embodiment; and

FIG. 11 illustrates a magnified view of a portion F of FIG. 10.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings; however, they may be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey exemplary implementations to those skilled in the art.

In the drawing figures, the dimensions of layers and regions may beexaggerated for clarity of illustration. It will also be understood thatwhen a layer or element is referred to as being “on” another layer orsubstrate, it can be directly on the other layer or substrate, orintervening layers may also be present. In addition, it will also beunderstood that when a layer is referred to as being “between” twolayers, it can be the only layer between the two layers, or one or moreintervening layers may also be present. Like reference numerals refer tolike elements throughout.

Hereinafter, the example embodiments will be described more fully withreference to the accompanying drawings, in which exemplary embodimentsof the example embodiments are shown.

FIG. 1 is schematic drawing of a deposition apparatus 100 according toan embodiment. FIG. 2 is a view of a mask 130 and a substrate S alignedby using alignment units 140 of the deposition apparatus 100.

Referring to FIGS. 1 and 2, the deposition apparatus 100 may include achamber 101, a support unit 110, a supply unit 120, the alignment units140, and alignment confirmation members 150.

The chamber 101 may be connected to a pump (not shown) to controlatmospheric pressure during a deposition process, and may accommodateand protect the substrate S, the support unit 110, and the supply unit120. Also, the chamber 101 may include at least one doorway 101 athrough which the substrate S or the mask 130 may move in and out.

The substrate S for the deposition process is disposed on the supportunit 110. The support unit 110 enables the substrate S to be immovableor unshakable during the deposition process, which is performed on thesubstrate S. In this regard, the support unit 110 may include a clamp(not shown). Also, the support unit 110 may include one or moreadsorption holes (not shown) for adsorption between the support unit 110and the substrate S. The support unit 110 includes first holes 111 andsecond holes 112, which will be described in mote detail below.

The alignment units 140 are placed to penetrate the first holes 111 ofthe support unit 110. The alignment units 140, e.g., linear members, areformed as to be movable while supporting a lower surface of the mask130. In particular, the alignment units 140 may move along the Z-axis,as shown in FIG. 2. Also, the alignment units 140 may move in adirection of X-axis and a direction perpendicular to the X-axis of FIGS.1 and 2 (the details will be described later). The alignment units 140are disposed outside of the substrate S, e.g., each of the alignmentunits 140 may be horizontally spaced apart from an adjacent edge of thesubstrate S as to least not overlap the substrate S along a verticaldirection.

The mask 130 has an opening unit (not shown) corresponding to adeposition pattern, i.e., a pattern to be formed on the substrate S.Also, the mask 130 may be an open mask. During the deposition process,the mask 130 and the substrate S may be positioned in close proximity toeach other, as shown in FIG. 2.

The supply unit 120 is disposed opposite to the substrate S so as tosupply one or more raw materials, i.e., a deposition material, in adirection toward the substrate S to advance the deposition process withrespect to the substrate S. That is, the supply unit 120 is placed abovethe support unit 110 to overlap the substrate S. For example, the supplyunit 120 may be a showerhead type that supplies one or more gases in adirection toward the substrate S.

In addition, a voltage may be applied between the supply unit 120 andthe support unit 110 to transform the raw material, which is supplied asa gas phase from the supply unit 120 in a direction toward the substrateS, to a plasma phase. That is, the deposition apparatus 100 may be aplasma enhanced chemical vapor deposition (PECVD) apparatus. Forexample, voltage may be applied to each of the supply unit 120 and thesupport unit 110. However, the example embodiments are not limitedthereto, and a separate electrode (not shown) may be disposed in thedeposition apparatus 100 to generate plasma between the supply unit 120and the support unit 110.

A size of the supply unit 120 is not limited, as long as the supply unit120 may be formed to have a larger area than the substrate S, e.g., anarea of a surface of the supply unit 120 facing the substrate S may belarger than an area of a surface of the substrate S facing the supplyunit 120. Therefore, a deposition layer that is uniform throughout anentire surface of the substrate S may be formed.

FIG. 3 is a magnified view of a portion R of FIG. 1. FIG. 4 is a planview of the support unit 110 of FIG. 1 in detail. FIG. 5 is a detailedplan view of one of the first holes 111 of the support unit 110 of FIG.4.

Referring to FIGS. 3 through 5, the support unit 110 includes the firstholes 111 and the second holes 112.

Each of the alignment units 140 is placed to penetrate through one ofthe first holes 111. That is, a number of the first holes 111corresponds to a number of the alignment units 140. For example, asshown in FIG. 4, the first holes 111 may be positioned at, e.g.,adjacent to, four corners of the support unit 110, and the alignmentunits 140 may be disposed to penetrate through the four first holes 111,as shown in FIG. 3. That is, the number of the alignment units 140 andthe number of the first holes 111 may be the same.

In addition, the first holes 111 are formed larger than at least across-sectional area of the alignment units 140. That is, as shown inFIG. 5, a diameter of the each first hole 111 may be larger than adiameter of a cross section of a corresponding alignment unit 140, e.g.,a space may be defined between an outer sidewall of the alignment unitand an inner wall of a corresponding first hole 111 (FIG. 3). Therefore,the alignment units 140 may move through the first holes 111. That is,as shown in FIG. 2, the alignment units 140 may move vertically (alongthe Z-axis of FIG. 2) through the first holes 111, and as shown in FIG.5, the alignment units 140 may also move parallel to the X-Y planewithin the first holes 111, i.e., along either of directions X1, X2, Y1,and Y2 of FIG. 5.

The alignment units 140 are in contact with a lower surface of the mask130 to support the mask 130. The alignment unit 140 may move along theX, Y, or Z-axis, i.e., in 3-dimensions, while supporting the mask 130.Therefore, the mask 130, being supported by the alignment units 140, mayalso move along the X, Y, or Z-axis by the movement of the alignmentunits 140.

The second holes 112 are positioned to overlap, e.g., correspond with,the substrate S. For example, as illustrated in FIG. 3, the substrate Smay cover the second holes 112. The second holes 112 may be positionedcloser to a center region of the support unit 110 than the first holes111. For example, as illustrated in FIG. 4, each second hole 112 may bebetween a center of the support unit 110 and a corresponding first hole11 to form a diagonal line through the center of the support unit.

The alignment confirmation members 150 are placed under the chamber 101to overlap, e.g., correspond with, the second holes 112. Also, thealignment confirmation members 150 are positioned not to move outside ofthe support unit 110, e.g., the support unit 110 may be positioned tocompletely cover and overlap upper surfaces of alignment confirmationmembers 150. Therefore, the alignment confirmation members 150 may beprevented from being contaminated by the raw material, which is sprayedfrom the supply unit 120, and thus accurate confirmation ability of thealignment confirmation members 150 may be maintained.

The alignment confirmation members 150 may confirm an alignment state ofthe substrate S and the mask 130 through the second holes 112 of thesupport unit 110. The alignment confirmation members 150 may be, e.g., acamera. Transparent windows 101 b may be formed at areas overlapping,e.g., corresponding to, the second holes 112 at a lower part of thechamber 101 to ease the confirming performance of the alignmentconfirmation members 150. For example, the alignment confirmationmembers 150 may be on an optical axis with the substrate S through thetransparent window 101 b and the second hole 112 (dashed line in FIG.3). Also, although not shown, an alignment mark (not shown) is formed ineach of the substrate S and the mask 130, and thus the alignmentconfirmation members 150 may confirm an alignment state of the substrateS and the mask 130 by checking the alignment mark of each of thesubstrate S and the mask 130.

Hereinafter, the operation of the deposition apparatus 100 according toan embodiment will be briefly described.

The substrate S is inserted into the chamber 101 of the depositionapparatus 100 and disposed on the support unit 110. Also, the mask 130is inserted into the chamber 101 and disposed on the alignment units 140to be supported by the alignment units 140.

The alignment units 140 align the mask 130 with respect to the substrateS while moving in a planar motion parallel to the substrate S. That is,the alignment units 140 perform an aligning task while moving along theX-axis or Y-axis in the first holes 111 of the support unit 110. Here,the alignment confirmation members 150 confirm the alignment mark (notshown) of the mask 130 and the alignment mark (not shown) of thesubstrate S in real-time. In this regard, the alignment units 140 mayeasily align the mask 130 with respect to the substrate S.

After performing the aligning task on the X-Y plane, the alignment units140 move along the Z-axis. That is, as shown in FIG. 2, the alignmentunits 140 move down toward the substrate S and position the mask 130 andthe substrate S in close proximity. After the aligning task, the desiredraw material is provided from the supply unit 120, and thus a depositionlayer of a desired pattern may be easily formed on the substrate S.

FIG. 6A is a cross-sectional view of the support unit 110 of FIG. 1.FIGS. 6B and 6C are modified examples of support units 110′ and 110″.For convenience in description, other elements than the support units110, 110′, or 110″, the substrate S, and the mask 130 are omitted.

As shown in FIG. 6A, for example, the support unit 110 may have a flatupper surface. The substrate S and the mask 130 are disposed on the flatupper surface of the support unit 110.

Also, as shown in FIG. 6B, the support unit 110′ may have a curved uppersurface. In particular, a center region may protrude upward compared toend regions of the upper surface of the support unit 110′. Moreover, alower surface of the support unit 110′ may also be curved to correspondto the upper surface of the support unit 110′. Because of such a curveof the support unit 110′, the substrate S may also have a curvecorresponding to the upper surface of the support unit 110′ when thesubstrate S is disposed on the support unit 110′. Thus, the substrate Sand the support unit 110′ may be effectively adhered to each other. Whenthe substrate S and the support unit 110′ are adhered to each other,contamination of the lower surface of the substrate S and the uppersurface of the support unit 110′ by the raw material sprayed from thesupply unit 120 may be effectively prevented. Also, the mask 130 mayalso be curved to correspond to the substrate S, so the substrate S andthe mask 130 may be effectively adhered to each other, therebyfacilitating a precise control of deposition layer of a desired patternon the substrate S.

A degree of the curve may vary, but a distance between the mostprotruding portion of the center region of the upper surface of thesupport unit 110′ and the end regions of the upper surface of thesupport unit 110′ is about 1 mm or less. That is, when the upper surfaceof the support unit 110′ is curved too much, the substrate S may curvetoo much, thereby causing a deposition layer thereon to be degradedduring the deposition process. Particularly, when an inorganicdeposition layer is formed on the substrate S, defects, e.g., cracks orthe like, may occur, so the degree of the curve needs to be controlledas described above.

In addition, as shown in FIG. 6C, an upper surface of the support unit110″ may be curved while a lower surface of the support unit 110″ may beflat. In this regard, stable positioning of the support unit 110″ may beeasily performed in the chamber 101.

According to the deposition apparatus 100 of the current embodiment, thesubstrate S is disposed on the upper surface of the support unit 110,and the supply unit 120 is disposed above the support unit 110 andopposite to the substrate S. Also, the mask 130 may be disposed on theupper surface of the substrate S to form a deposition layer of a desiredpattern. The mask 130 may be easily aligned with the substrate S byusing the alignment units 140. Particularly, the mask 130 and thesubstrate S may be aligned without an influence of the supply unit 120by moving the alignment units 140, which penetrate through the firstholes 111 of the support unit 110 to contact the mask 130, in threedimensions to align the mask 130 with the substrate S.

Further, the alignment confirmation members 150 are arranged under thesupport unit 110 may examine and confirm the alignment state of thesubstrate S and the mask 130 through the second holes 112 of the supportunit 110 in real-time, so the alignment task of the substrate S and themask 130 may be efficiently performed. In particular, the alignmentconfirmation members 150 may be disposed opposite to the supply unit120, with the support unit 110 therebetween. That is, the supply unit120 is disposed above the support unit 110, and the alignmentconfirmation members 150 are disposed below the support unit 110. Thus,the alignment confirmation members 150 may be shielded from the supplyunit 120, thereby contamination caused by the deposition raw materialssprayed from the supply unit 120 may be prevented or substantiallyminimized with respect to the alignment confirmation members 150.

Also, when the support unit 110′ or 110″ with the curved upper surfaceis used, the substrate S and the mask 130 may be easily adhered to eachother. Therefore, formation of a precise pattern for a deposition layeron the substrate S may be provided.

FIG. 7 is a schematic view of a deposition apparatus 200 according toanother embodiment. FIG. 8 is a magnified view of a portion R of FIG. 7.FIG. 9 is a detailed plan view of the support unit 210 of FIG. 7.

Referring to FIGS. 7 and 8, the deposition apparatus 200 may include achamber 201, a support unit 210, a supply unit 220, alignment units 240,alignment confirmation members 250, a power unit 275, lift pins 260, abase plate 225, and a cleaning unit 290.

The chamber 201 may be connected to a pump (not shown) to controlatmospheric pressure during a deposition process, and may accommodateand protect the substrate S, the support unit 210, and the supply unit220. Also, the chamber 201 may include at least one doorway 201 athrough which the substrate S or a mask 230 may move in and out.

The substrate S for the deposition process is disposed on the supportunit 210. In particular, when the substrate S is inserted into thechamber 201 through the doorway 201 a of the chamber 201, the substrateis disposed on the lift pins 260. The lift pins 260 may move vertically,i.e., along the Z-axis of FIG. 7, thus the lift pins 260 having thesubstrate S thereon move down in a direction toward the support unit 210to place the substrate S on the support unit 210. The lift pins 260 aredisposed to penetrate through third holes 213 of the support unit 210.The lift pins 260 move in a vertical direction passing through the thirdholes 213.

The support unit 210 enables the substrate S to be immovable orunshakable during the deposition process, which is performed on thesubstrate S. In this regard, the support unit 210 may include a clamp(not shown). Also, the support unit 210 may include adsorption holes(not shown) for adsorption between the support unit 210 and thesubstrate S. The support unit 210 includes first holes 211, second holes212, and the third holes 213. Moreover, the support unit 210 is formedto move vertically. That is, the support unit 210 moves in a directionof Z1 or Z2 as shown in FIG. 7. In this regard, a space between thesubstrate S and the supply unit 220 may be controlled after thesubstrate S is disposed on the support unit 210, and thus depositionconditions, particularly plasma generating conditions, may be varied.

The alignment units 240 are placed to penetrate the first holes 211 ofthe support unit 210. The alignment units 240 are formed as to bemovable while supporting a lower surface of the mask 230. In particular,the alignment unit 240 may move along the X, Y, or Z-axis whilesupporting the mask 130 in the same manner described in the previousembodiment. The alignment units 240 are disposed outside of thesubstrate S, at least not to overlap the substrate S.

The mask 230 includes a mask body 231 and a mask frame 232. The maskbody 231 has an opening unit (not shown) corresponding to a depositionpattern, which will be formed on the substrate S. Here, the mask body231 may have a plurality of patterned opening units. In anotherembodiment, the mask 230 may be an open mask, and particularly the maskbody 231 may have one opening unit of an extended type without aseparate pattern. During the deposition process, the mask 230 and thesubstrate S may be positioned in close proximity to each other.

The supply unit 220 is disposed opposite to the substrate S so as tosupply one or more raw materials in a direction toward the substrate Sto proceed with the deposition process with respect to the substrate S.That is, the supply unit 220 is placed above the support unit 210. Forexample, the supply unit 220 may be a showerhead that supplies one ormore gases in a direction toward the substrate S. Also, the supply unit220 may be formed to uniformly supply the raw material onto the entiresurface of the substrate S, and may be a diffuser type.

The base plate 225 may be disposed above the supply unit 220. That is,the base plate 225 may be disposed farther from the substrate S than thesupply unit 220. The base plate 225 supports the supply unit 220.

In addition, a voltage may be applied between the supply unit 220 andthe support unit 210 to transform the raw material, which is supplied asa gas phase from the supply unit 220 in a direction toward the substrateS, to a plasma phase. For example, a voltage may be applied to each ofthe supply unit 220 and the support unit 210. In another example, avoltage may be applied to the base plate 225. Moreover, when a voltageis applied, a ground voltage may be applied to one side.

The power unit 275 provides a voltage for transforming the raw material,which is supplied as a gas phase from the supply unit 220 in a directiontoward the substrate S, to a plasma phase. The power unit 275 mayprovide various types of voltages, e.g., radio frequency (RF) voltage.The power unit 275 may be disposed outside of the chamber 201. However,the example embodiments are not limited thereto, and a separateelectrode (not shown) may be disposed in the deposition apparatus 200 togenerate plasma between the supply unit 220 and the support unit 210.

A size of the supply unit 220 is not limited, as long as the supply unit220 may be formed to have a larger area than the substrate S. Therefore,a deposition layer that is uniform throughout an entire surface of thesubstrate S may be formed.

The cleaning unit 290 may be disposed as to be connected with thechamber 201. The cleaning unit 290 cleans the chamber 201 when thechamber 201 is contaminated as the deposition process is performed. Thecleaning unit 290 may generate and provide a remote plasma into thechamber 201 to clean the chamber 201. For example, as the cleaning unit290 is supplied with a NF₃ gas, the gas is transformed into a plasmaphase, and the plasma is inserted to the chamber 201 so as the plasmamay be in contact with layers formed on inner walls of the chamber 201,and thus the inner walls of the chamber 201 may be cleansed.

The alignment units 240, the support unit 210, and the like will bedescribed in detail.

One of the alignment units 240 is placed to penetrate through one of thefirst holes 211. That is, a number of the first holes 211 corresponds toa number of the alignment units 240. For example, as shown in FIG. 9,the first holes 211 may be positioned adjacent to four corners of thesupport unit 210, and although not shown, the alignment units 240 mayalso be disposed to penetrate through the four first holes 211. Inaddition, the first holes 211 are formed larger than at least across-sectional area of the alignment units 240. Therefore, thealignment units 240 may move through the first holes 211.

The alignment units 240 are in contact with the lower surface of themask 230 to support the mask 230. The alignment unit 240 may move alongthe X, Y, or Z-axis, i.e., in 3-dimensions, while supporting the mask230. Therefore, the mask 230 being supported by the alignment units 240may also move along the X, Y, or Z-axis by the movement of the alignmentunits 240.

The second holes 212 are positioned to correspond with the substrate S.The second holes 212 may be positioned closer to a center region of thesupport unit 210 than the first holes 211.

The alignment confirmation members 250 are placed under the chamber 201to correspond with the second holes 212. Also, the alignmentconfirmation members 250 are positioned not to move outside of thesupport unit 210. Therefore, the alignment confirmation members 250 maybe prevented from being contaminated by the raw material, which issprayed from the supply unit 220, and thus accurate confirmation abilityof the alignment confirmation members 250 may be maintained.

The alignment confirmation members 250 may confirm an alignment state ofthe substrate S and the mask 230 through the second holes 212 of thesupport unit 210. The alignment confirmation members 250 may be, e.g., acamera. Transparent windows (not shown) may be formed at areascorresponding to the second holes 212 at a lower part of the chamber 201to ease the confirming performance of the alignment confirmation members250. Also, although not shown, an alignment mark (not shown) is formedin each of the substrate S and the mask 230, and thus the alignmentconfirmation members 250 confirm an alignment state of the substrate Sand the mask 230 by checking the alignment mark of each of the substrateS and the mask 230.

The third holes 213 are positioned closer to a center region of thesupport unit 210 than the first holes 211 and the second holes 212. Thelift pins 260 are placed to penetrate through the third holes 213 and asize of the third holes 213 may be formed larger than a cross-sectionalarea of the lift pins 260. Therefore, the lift pins 260 may easily movevertically through the third holes 213, i.e., without contacting thesidewalls of the third holes 213.

Hereinafter, the operation of the deposition apparatus 200 according toanother embodiment will be briefly described.

When the substrate S is inserted into the chamber 201 of the depositionapparatus 200, the substrate S is supported by the lift pins 260disposed so as to penetrate through the third holes 213 of the supportunit 210. The lift pins 260 move down while supporting the substrate Stoward the support unit 210 and dispose the substrate S on the uppersurface of the support unit 210. In order to allow for the verticalmovement of the lift pins 260, the lift pins 260 may be disposed in thechamber 201, or as shown in FIGS. 7 and 8, certain areas of the liftpins 260 may be disposed penetrating through the chamber 201.

Also, the mask 230 is inserted into the chamber 201 and disposed on thealignment units 240 to be supported by the alignment units 240. Thealignment units 240 align the mask 230 with respect to the substrate S,while moving in a planar motion parallel to the substrate S. That is,the alignment units 240 perform an aligning task while moving along theX-axis or Y-axis in the first holes 211 of the support unit 210. Here,the alignment confirmation members 250 confirm the alignment mark (notshown) of the mask 230 and the alignment mark (not shown) of thesubstrate S in real-time. In this regard, the alignment units 240 mayeasily align the mask 230 with respect to the substrate S.

After performing the aligning task on the X-Y plane, the alignment units240 move along the Z-axis toward the support unit 210. That is, thealignment units 240 move down toward the support unit 210 and positionthe mask 230 and the substrate S in close proximity. After the aligningtask, the desired raw material is provided from the supply unit 220, andthus a deposition layer of a desired pattern may be easily formed on thesubstrate S. Here, to increase efficiency of a raw material supply, adistance between the supply unit 220 and the substrate S may becontrolled by the vertical movement of the support unit 210.

As described above, a plasma may be generated for the depositionprocess.

Although not shown, the support unit 210 of the current embodiment mayalso have a flat surface or a curved surface, as described withreference to FIGS. 6A through 6C.

According to the deposition apparatus 200 of the current embodiment, thesubstrate S is disposed on the upper surface of the support unit 210,and the supply unit 220 is disposed above the support unit 210 andopposite to the substrate S. Also, the mask 230 may be disposed on theupper surface of the substrate S to form a deposition layer of a desiredpattern. The mask 230 may be easily aligned with the substrate S byusing the alignment units 240. Particularly, the mask 230 and thesubstrate S may be aligned without an influence of the supply unit 220by moving the alignment units 240 in the first holes 211 of the supportunit 210. Further, as the alignment confirmation members 250 arearranged under the support unit 210, and the alignment confirmationmembers 250 advance the alignment task by confirming the alignment stateof the substrate S and the mask 230 through the second holes 212 of thesupport unit 210 in real-time, the alignment task of the substrate S andthe mask 230 may be efficiently performed.

In particular, the alignment confirmation members 250 may be disposedopposite to the supply unit 220 with the support unit 210 therebetween.That is, the support unit 220 is disposed above the support unit 210,and the alignment confirmation members 250 are disposed under thesupport unit 210. Thus, the alignment confirmation members 250 preventcontamination caused by the deposition raw materials being sprayed fromthe supply unit 220.

Also, when the substrate S is disposed on the support unit 210, thesubstrate S is placed by using the lift pins 260 penetrating through thethird holes 213 of the support unit 210. Thus, the substrate S may beimmovably or unshakably disposed on the support unit 210 at a desiredlocation. Particularly, the third holes 213 may be positioned closer tothe center region of the support unit 210 than the first holes 211 andthe second holes 212 so as the lift pins 260 do not influence thealigning task of the mask 230. In addition, if the upper surface of thesupport unit 210 is curved, the substrate S and the mask 230 may beadhered to each other, and thus a precise pattern may be formed on adeposition layer of the substrate S.

FIG. 10 is a schematic cross-sectional view of an organic light-emittingdisplay apparatus 10 manufactured using any one of the depositionapparatuses 100 and 200 according to an embodiment. FIG. 11 is amagnified view of a portion F of FIG. 10.

Referring to FIGS. 10 and 11, the organic light-emitting displayapparatus 10 may include a substrate 30. The substrate 30 may be formedof, e.g., a glass material, a plastic material, or a metal. A bufferlayer 31 may be formed on the substrate 30 to provide a planarizedsurface and to prevent moisture and foreign materials from penetratingtowards the substrate 30.

A thin film transistor (TFT) 40, a capacitor 50, and an organiclight-emitting device 60 may be formed on the buffer layer 31. The TFT40 may include an active layer 41, a gate electrode 42, and source/drainelectrodes 43. The organic light-emitting device 60 may include a firstelectrode 61, a second electrode 62, and an intermediate layer 63. Thecapacitor 50 may include a first capacitor electrode 51 and a secondcapacitor electrode 52.

More specifically, the active layer 41 formed to a predetermined patternmay be disposed on an upper surface of the buffer layer 31. The activelayer 41 may include an inorganic semiconductor material, e.g., silicon,an organic semiconductor material, or an oxide semiconductor material,and may be formed by optionally doping a p-type dopant or an n-typedopant.

A gate insulating film 32 may be formed on the active layer 41. The gateelectrode 42 may be formed on the gate insulating film 32 to correspondto the active layer 41. The first capacitor electrode 51 may be formedon the gate insulating film 32 by using the same material used to formthe gate electrode 42.

An interlayer insulating layer 33 covering the gate electrode 42 may beformed, and the source/drain electrodes 43 may be formed to contactpredetermined regions of the active layer 41 on the interlayerinsulating layer 33. The second capacitor electrode 52 may be formed onthe interlayer insulating layer 33 by using the same material used toform the source/drain electrodes 43.

A passivation layer 34 covering the source/drain electrodes 43 may beformed, and an additional insulating layer may be further formed on thepassivation layer 34 to planarize the TFT 40.

The first electrode 61 may be formed on the passivation layer 34. Thefirst electrode 61 may be formed to be electrically connected to one ofthe source/drain electrodes 43. Afterwards, a pixel defining film 35covering the first electrode 61 may be formed. After forming apredetermined opening 64 in the pixel defining film 35, an intermediatelayer 63 that includes an organic light-emitting layer may be formed ina region defined by the opening 64. The second electrode 62 may beformed on the intermediate layer 63.

An encapsulating layer 70 may be formed on the second electrode 62. Theencapsulating layer 70 may contain an organic material or an inorganicmaterial, and may have a structure in which the organic material and theinorganic material are alternately stacked. For example, theencapsulating layer 70 may be formed by using the deposition apparatus100 or 200. That is, a desired layer may be formed by using thedeposition apparatus 100 or 200, after inserting the substrate 30 onwhich the second electrode 62 is formed into the chamber 101 or 201.

In particular, the encapsulating layer 70 may include an inorganic layer71 and an organic layer 72. The inorganic layer 71 may include aplurality of layers 71 a, 71 b, and 71 c, and the organic layer 72 mayinclude a plurality of layers 72 a, 72 b, and 72 c. At this point, thelayers 71 a, 71 b, and 71 c of the inorganic layer 71 may be formed byusing the deposition apparatus 100 or 200.

However, the example embodiments are not limited thereto. That is, thebuffer layer 31, the gate insulating film 32, the interlayer insulatinglayer 33, the passivation layer 34, the pixel defining film 35, andother insulating layers may also be formed by using the depositionapparatus 100 or 200 according to the example embodiments. Also, theactive layer 41, the gate electrode 42, the source/drain electrodes 43,the first electrode 61, the intermediate layer 63, the second electrode62, and other various thin films may be formed by using the depositionapparatus 100 or 200 according to the example embodiments.

As described above, when the deposition apparatus 100 or 200 accordingto the example embodiments are used, the characteristics of thedeposited films formed in the organic light-emitting display apparatus10 is increased, e.g., the electrical characteristics and image qualitycharacteristics are increased. Also, thin films included in liquidcrystal display (LCD) apparatuses and thin films included in variousdisplay apparatuses besides the organic light-emitting display apparatus10 may be formed by using the deposition apparatus 100 or 200 accordingto the example embodiments.

In contrast, when a conventional organic light-emitting displayapparatus is increased in size and is expected to have high definition,it may be difficult to deposit a large thin film with a desiredcharacteristic. Also, there may be a limit in increasing an efficiencyof a process of forming the large thin film.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the example embodimentsas set forth in the following claims.

What is claimed is:
 1. A deposition apparatus for performing adeposition process by using a mask with respect to a substrate, thedeposition apparatus comprising: a deposition chamber including atransparent window at a lower part of the deposition chamber; astationary support unit in the chamber, the support unit including a topsurface and first holes extending through the top surface of the supportunit, the support unit being configured to support the substrate; asupply unit configured to supply at least one deposition raw materialtoward the substrate; movable alignment units that extend through thefirst holes of the support unit, the alignment units being configured tosupport the mask and being movable in three dimensions to align the maskwith respect to the substrate, and alignment confirmation members belowthe lower part of the deposition chamber, the alignment confirmationmembers to confirm an alignment state of the substrate and the maskthrough the transparent window of the deposition chamber and secondholes in the support unit.
 2. The deposition apparatus as claimed inclaim 1, wherein the alignment confirmation members are configured tocheck alignment of an alignment mark on the substrate and an alignmentmark on the mask to confirm the alignment state of the substrate and themask.
 3. The deposition apparatus as claimed in claim 1, wherein thesecond holes in the support unit are closer to a center region of thesupport unit than the first holes.
 4. The deposition apparatus asclaimed in claim 1, wherein the alignment confirmation members arefarther from the supply unit than the support unit.
 5. The depositionapparatus as claimed in claim 1, wherein the support unit is between thealignment confirmation members and the supply unit.
 6. The depositionapparatus as claimed in claim 1, wherein the chamber includestransparent windows overlapping the second holes, the alignmentconfirmation members being configured to confirm the alignment state ofthe substrate and the mask through the transparent windows.
 7. Thedeposition apparatus as claimed in claim 1, wherein a cross-sectionalarea of the alignment units is smaller than a size of the first holes,the alignment units being movable in three dimensions inside the firstholes.
 8. The deposition apparatus as claimed in claim 1, wherein thealignment units are configured to move vertically and horizontallywithin the first hole while supporting the mask.
 9. The depositionapparatus as claimed in claim 1, wherein an upper surface of the supportunit is curved.
 10. The deposition apparatus as claimed in claim 9,wherein a center region of the upper surface of the support unitprotrudes upward relative to end regions of the upper surface of thesupport unit.
 11. The deposition apparatus as claimed in claim 10,wherein a lower surface of the support unit is curved in accordance witha curvature of the upper surface of the support unit.
 12. The depositionapparatus as claimed in claim 10, wherein a lower surface of the supportunit is flat.
 13. The deposition apparatus as claimed in claim 1,further comprising lift pins through third holes in the support unit,the lift pins being configured to support the substrate and to movevertically in the third holes to dispose the substrate onto the supportunit.
 14. The deposition apparatus as claimed in claim 13, wherein thethird holes are closer to a center region of the support unit than thefirst holes.
 15. The deposition apparatus as claimed in claim 1, furthercomprising a base plate configured to support the supply unit, the baseplate being positioned farther from the support unit than the supplyunit.
 16. The deposition apparatus as claimed in claim 1, furthercomprising a power unit configured to apply voltage between the supplyunit and the support unit to generate plasma.
 17. The depositionapparatus as claimed in claim 1, further comprising a cleaning unitconfigured to generate plasma and to insert the plasma into the chamberto clean inside of the chamber.
 18. The deposition apparatus as claimedin claim 1, wherein the support unit is movable along a normal thereto.19. The deposition apparatus as claimed in claim 1, wherein the chamberincludes at least one doorway, the substrate or the mask being insertedto the chamber through the at least one doorway.